1250
P79
ÖćøìéúĂÜđóČę
ĂðøąöćèÙŠ
ćĒëïߊ
ĂÜüŠ
ćÜóúĆ
ÜÜćî×ĂÜàĉ
úĉ
ÖĂîéš
ü÷ĕéēĂé
Experimental Estimation of the Band Gap Energy of Silicon by Using Diodes
îĉ
đìýǰïč
âÖúĉę
î
1
ÖĆ
ú÷ćǰđĂĊĚ
÷ðøąđÿøĉ
åýĆ
Öéĉĝ
2
ìüĊ
ǰÞĉ
öĂš
Ă÷
3
ǰĒúąöîĎ
ǰđôŚũ
ĂÜôčŜ
Ü
4*
Nitase Boonklin
1
,Kalya Eaiprasertsak
2
, Tawee Chim-Oye
3
and Munu Fuangfoong
4*
ïìÙĆ
é÷Š
Ă
øć÷ÜćîÞïĆ
ïîĊĚ
ĕéš
đÿîĂÖćøìéúĂÜĂ÷Š
ćÜÜŠ
ć÷ÿĞ
ćĀøĆ
ïĀćÙŠ
ćĒëïߊ
ĂÜüŠ
ćÜóúĆ
ÜÜćî×ĂÜàĉ
úĉ
ÖĂîēé÷ðøąöćè éš
ü÷ÖćøĀć
ÙüćöÿĆ
öóĆ
îíŤ
đßĉ
Üđÿš
îøąĀüŠ
ćÜĂč
èĀõĎ
öĉ
ĒúąýĆ
Ö÷Ť
ĕôôŜ
ćêÖÙøŠ
ĂöøĂ÷êŠ
ĂóĊ
-đĂĘ
î×ĂÜĕéēĂéđïĂøŤ
1N4001, 1N4007 Ēúą 1N4148
Ĕîߊ
üÜĂč
èĀõĎ
öĉ
274 ëċ
Ü 31 đÙúüĉ
î ñúúĆ
óíŤ
ìĊę
ĕéš
ĔÖúš
đÙĊ
÷ÜÖĆ
ïÙŠ
ćìĊę
÷ĂöøĆ
ïēé÷öĊ
ÙüćöÙúćéđÙúČę
ĂîĕöŠ
đÖĉ
î 2 đðĂøŤ
đàĘ
îêŤ
ÙĞ
ćÿĞ
ćÙĆ
â:
Ēëïߊ
ĂÜüŠ
ćÜóúĆ
ÜÜćî àĉ
úĉ
ÖĂî ĕéēĂé
Abstract
In this report, a simple experiment for measuring the band gap energy of silicon is proposed by
using linear relationship between the temperature and p-n junction voltage of diode number 1N4001,
1N4007 and 1N4148 in the temperature range of 274 to 315 Kelvin. The results that obtained are in good
agreement with the accept value with error less than 2%.
Keywords:
Energy Band, Silicon, Diode
1
îĆ
Öüĉ
ì÷ćýćÿêøŤ
õćÙüĉ
ßćôŗ
ÿĉ
ÖÿŤ
Ùèąüĉ
ì÷ćýćÿêøŤ
ĒúąđìÙēîēú÷Ċ
öĀćüĉ
ì÷ćúĆ
÷íøøöýćÿêøŤ
ýĎ
î÷Ť
øĆ
Üÿĉ
ê 1212
2
Ă éø , õćÙüĉ
ßćôŗ
ÿĉ
ÖÿŤ
Ùèąüĉ
ì÷ćýćÿêøŤ
ĒúąđìÙēîēú÷Ċ
öĀćüĉ
ì÷ćúĆ
÷íøøöýćÿêøŤ
ýĎ
î÷Ť
øĆ
Üÿĉ
ê
1212
3
øý éø , õćÙüĉ
ßćôŗ
ÿĉ
ÖÿŤ
Ùèąüĉ
ì÷ćýćÿêøŤ
ĒúąđìÙēîēú÷Ċ
öĀćüĉ
ì÷ćúĆ
÷íøøöýćÿêøŤ
ýĎ
î÷Ť
øĆ
Üÿĉ
ê 1212
4
øý , õćÙüĉ
ßćôŗ
ÿĉ
ÖÿŤ
Ùèąüĉ
ì÷ćýćÿêøŤ
ĒúąđìÙēîēú÷Ċ
öĀćüĉ
ì÷ćúĆ
÷íøøöýćÿêøŤ
ýĎ
î÷Ť
øĆ
Üÿĉ
ê 1212
Corresponding author: Tel: 0853175722, E-mail address:
