µ¦¦³»
¤ª·
µµ¦Â¨³Á°¨µª·
´
¥ ¤®µª·
¥µ¨´
¥´
¬·
¦´Ê
¸É
19 ¦³Î
µe
2552
1
¨
°Î
µÂ®n
ª´
»
¦°¦´
Ī¦´
«¤¸
n
°Ã¦¦o
µ
°¢d
¨r
¤µÅµÁ¸
¥¤Å°°År
¸É
笼
°o
ª¥ª·
¸
¸
¸
¦¸
°¸
¢ ¤¸
¦° {
Á°¦·
Effect of Substrate Radial Position on Structure of TiO
2
Thin Film
Deposited by DC Reactive Magnetron Sputtering
¡¹É
»
µ«·
¨µ
1
, ·
¦´
¦r
ª·
·
°´
r
2*
, »
¦·
®r
Å¥»
3
Pungboon Pansila
1
, Nirun Witit-anun
2*
, Surasing Chaiyakun
3
´
¥n
°
¢d
¨r
¤µÅµÁ¸
¥¤Å°°År
笼
°o
ª¥¦³¸
¸
¦¸
°¸
¢ ¤¸
¦° {
Á°¦·
o
ª¥Âp
¤
°µ¦r
°´
°°·
Á ¨µ¦«¹
¬µ¡ªn
µÎ
µÂ®n
µ¦ªµª´
»
¦°¦´
Ī¦´
«¤¸
¤¸
¨n
°Ã¦¦o
µ¨¹
°¢d
¨r
¤
¸É
笼
°Åo
µª·
´
¥¸Ê
µ¤µ¦Á¨º
°¢d
¨r
¤ÅµÁ¸
¥¤Å°°År
¸É
¤¸
æ¦o
µ¨¹
塵绫
»
¦°¦´
¸É
Ťn
Įo
ªµ¤¦o
° Á¤ºÉ
°ªµª´
»
¦°¦´
¸É
Î
µÂ®n
40 mm
Ī¦´
«¤¸
³¸É
¡¢d
¨r
¤ÅµÁ¸
¥¤Å°°År
¸É
¤¸
æ¦o
µ¨¹
¤°µÁ/¦¼
Ũr
¨³°´
µ ¸É
Î
µÂ®n
ª´
»
¦°¦´
Ī¦´
«¤¸
Án
µ´
0-20 mm ¨³
60-80 mm µ¤¨Î
µ´
°µ¸Ê
ªµ¤®µÂ¨³ªµ¤®¥µ·
ª
°¢d
¨r
¤³¨¨ Á¤ºÉ
°Î
µÂ®n
ª´
»
¦°¦´
Ī¦´
«¤¸
Á¡·É
¤
¹Ê
Ã¥ªµ¤®µ¢d
¨r
¤³¨µ 154.2 nm Á}
113.8 nm ªµ¤®¥µ·
ª³¨µ 5.6 nm Á}
1.4 nm ¨³
µÁ¦
°¢d
¨r
¤¨¨µ 74.5 nm Á}
48 nm
Î
µÎ
µ´
: ¢d
¨r
¤µ ŵÁ¸
¥¤Å°°År
{
Á°¦·
¦¸
°¸
¢ ¤¸
¦° {
Á°¦·
°µÁ
Abstract
TiO
2
thin films were deposited by DC reactive magnetron sputtering using a mixture of Ar and O
2
gases.
It was found that the crystalline structure strong depends on the radial position of the substrate. Anatase TiO
2
thin
film were successfully obtained on a unheated Si(100) substrate located at a radial position of 40 mm. While
mixed phase of Anatase/Rutile and amorphous TiO
2
films were deposited at radial positions of 0-20 mm and 60-
80 mm, respectively. In addition, it was found that, the thickness, roughness and grains size of deposited films
decreased with increasing radial position of the substrate. The films thickness decreased from 154.2 nm to 113.8
nm , roughness decreased from 5.6 nm to 1.4 nm and grains size decreased from 74.5 nm to 48 nm
Keywords
:
thin film; titanium dioxide; sputtering; reactive magnetron sputtering; anatase
1
·
·
´
·
«¹
µ,
2
¼o
n
ª¥«µ¦µµ¦¥r
,
3
¦°«µ¦µµ¦¥r
£µª·
µ¢d
·
r
³ª·
¥µ«µ¦r
¤®µª·
¥µ¨´
¥¼
¦¡µ .¨»
¦¸
20131
* Corresponding author. æ«´
¡r
/浦 038103084
.